A novel implementation of noise analysis in general-purpose PDE-based semiconductor device simulators

Author

Bonani, F. ; Ghione, G. ; Pinto, M.R. ; Smith, R.K.

Author_Institution

Dipartimento di Elettronica, Politecnico di Torino, Italy

fYear

1995

Firstpage

777

Lastpage

780

Abstract

The paper presents an efficient technique to evaluate the noise of bipolar or monopolar devices by means of the Impedance Field Method, implemented through a two-carrier drift-diffusion (DD) multidimensional numerical model. The approach, based on Branin´s method for the noise analysis of networks, extends the adjoint approach already proposed for monopolar noise analysis. Preliminary results are presented on the analysis of pn junction diodes and FET´s

Keywords

carrier lifetime; field effect transistors; semiconductor device models; semiconductor device noise; semiconductor diodes; Branin´s method; FET; PDE-based semiconductor device simulators; adjoint approach; bipolar devices; impedance field method; monopolar devices; noise analysis; pn junction diodes; two-carrier drift-diffusion multidimensional numerical model; Analytical models; Fluctuations; Green´s function methods; Impedance; Integral equations; Microscopy; Multidimensional systems; Noise generators; Semiconductor device noise; Semiconductor devices;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1995. IEDM '95., International

Conference_Location

Washington, DC

ISSN

0163-1918

Print_ISBN

0-7803-2700-4

Type

conf

DOI

10.1109/IEDM.1995.499333

Filename

499333