Title :
Rigorous two-dimensional physical modeling of noise performance of sub-0.25 μm gate-length FETs
Author :
Abou-Elnour, A. ; Schünemann, Klaus
Author_Institution :
Tech. Univ. Hamburg-Harburg, Germany
Abstract :
A rigorous two-dimensional physical device simulator is developed to determine the noise behavior of semiconductor devices taking into account the non-stationary transport properties and quantization effects. The microscopic nature of the model allows accurate understanding and interpretation of the physical operation of these devices. As an example, the model is applied to compare the noise performance of similar MESFET and Hetero-FET structures, to determine the physical phenomena which are dominating their behavior, and to study how to improve the noise performance in a wide frequency range of operation
Keywords :
Monte Carlo methods; Schottky gate field effect transistors; field effect transistors; semiconductor device models; semiconductor device noise; MESFET; hetero-FET structures; noise behavior; noise performance; nonstationary transport properties; physical operation; physical phenomena; quantization effects; two-dimensional physical modeling; FETs; Frequency; Iron; MESFETs; Microscopy; Noise figure; Noise reduction; Poisson equations; Quantization; Semiconductor device noise;
Conference_Titel :
Electron Devices Meeting, 1995. IEDM '95., International
Conference_Location :
Washington, DC
Print_ISBN :
0-7803-2700-4
DOI :
10.1109/IEDM.1995.499334
