Title :
High power AlGaAs/GaAs HBTs and their application to mobile communications systems
Author :
Yoshimasu, Toshihiko
Author_Institution :
New Device Promotion Center, Sharp Corp., Nara, Japan
Abstract :
This paper addresses the power application of AlGaAs/GaAs heterojunction bipolar transistors (HBTs) to L-band mobile communications systems. From points of view of circuit and systems design, features of HBT technology are discussed and compared with those of GaAs MESFET technology
Keywords :
III-V semiconductors; UHF bipolar transistors; aluminium compounds; gallium arsenide; heterojunction bipolar transistors; mobile communication; power bipolar transistors; AlGaAs-GaAs; L-band; circuit design; mobile communications systems; power HBTs; systems design; Current density; Gallium arsenide; Heterojunction bipolar transistors; High power amplifiers; Knee; MESFETs; Mobile communication; Power amplifiers; Telephone sets; Voltage;
Conference_Titel :
Electron Devices Meeting, 1995. IEDM '95., International
Conference_Location :
Washington, DC
Print_ISBN :
0-7803-2700-4
DOI :
10.1109/IEDM.1995.499335
