Title :
AlInAs/GaInAs/InP double heterojunction bipolar transistor with a novel base-collector design for power applications
Author :
Nguyen, Chanh ; Liu, Takyiu ; Chen, Mary ; Sun, Hsiang-Chih ; Rensch, David
Author_Institution :
Hughes Res. Labs., Malibu, CA, USA
Abstract :
We report the performance of an InP-based DHBT with a new collector design. The base-collector junction was formed with an all arsenide chirped superlattice. The elimination of the potential barrier at the base-collector junction has been achieved by properly combining the electrostatic potential arising from the ionized dopants in the space charge region and the energy band profile of the CSL. The conduction band offset between AlInAs and InP enabled hot electrons to be launched into the InP collector. The new design resulted in an excellent combination of speed and breakdown voltage with superior microwave power performance at X-band. Output power of 2 W (5.6 W/mm) with 70% power-added-efficiency at 9 GHz was achieved
Keywords :
III-V semiconductors; aluminium compounds; electric breakdown; gallium arsenide; heterojunction bipolar transistors; indium compounds; microwave bipolar transistors; microwave power transistors; power bipolar transistors; semiconductor superlattices; space-charge-limited conduction; 2 W; 70 percent; 9 GHz; AlInAs-GaInAs-InP; X-band; base-collector design; breakdown voltage; chirped superlattice; conduction band offset; double heterojunction bipolar transistor; electrostatic potential; energy band profile; microwave power performance; potential barrier; power applications; space charge region; Double heterojunction bipolar transistors; Gallium arsenide; Heterojunction bipolar transistors; High power amplifiers; Indium phosphide; Photonic band gap; Power amplifiers; Power generation; Thermal conductivity; Voltage;
Conference_Titel :
Electron Devices Meeting, 1995. IEDM '95., International
Conference_Location :
Washington, DC
Print_ISBN :
0-7803-2700-4
DOI :
10.1109/IEDM.1995.499338
