DocumentCode
1657737
Title
In-line FTIR for epitaxial silicon film thickness measurement on an Applied Materials Centura cluster tool
Author
Wang, C. Jason ; Wise, Rick ; Liu, Shaohua ; Haigis, John ; Farquharson, Stuart ; Fowler, Burt
Author_Institution
Texas Instrum. Inc., Dallas, TX, USA
fYear
1994
Firstpage
229
Lastpage
231
Abstract
A technique for integrating a Fourier transform infrared (FTIR) spectrometer into an Applied Materials (AMAT) 5200 Centura single-wafer multi-chamber cluster tool has been developed. The FTIR spectrometer was optically interfaced to the cool-down chamber of the reactor using a set of modular transfer optics and a modified cover on the cool-down chamber. The instrument provided post-process in-line measurement of epitaxial silicon film thickness. Data acquisition and analysis required for the thickness measurement, was performed within seconds. The effect of wafer temperature on FTIR thickness measurement was observed and characterized. Repeatability and reproducibility tests revealed the measurement capability of this in-line FT-IR metrology was comparable to commercially available off-line FTIRs. The addition of the in-line FT-IR system does not adversely affect machine throughput
Keywords
cluster tools; Applied Materials 5200 Centura single-wafer multi-chamber cluster tool; FTIR metrology; Fourier transform infrared spectrometer; Si; cool-down chamber; data acquisition; data analysis; epitaxial silicon film thickness; in-line measurement; modular transfer optics; optical interface; repeatability; reproducibility; Fourier transforms; Inductors; Infrared spectra; Instruments; Optical films; Optical materials; Semiconductor films; Silicon; Spectroscopy; Thickness measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Advanced Semiconductor Manufacturing Conference and Workshop. 1994 IEEE/SEMI
Conference_Location
Cambridge, MA
Print_ISBN
0-7803-2053-0
Type
conf
DOI
10.1109/ASMC.1994.588256
Filename
588256
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