Title :
Hybrid digital/microwave HBTs for >30 Gb/s optical communications circuits
Author :
Zampardi, P.J. ; Pierson, R.L. ; Runge, K. ; Yu, R. ; Beccue, S.M. ; Yu, J. ; Fitzsimmons, S. ; Wang, K.C.
Author_Institution :
Rockwell Int. Sci. Center, Thousand Oaks, CA, USA
Abstract :
The demand for higher bit rate communications systems requires the development of key chip sets using high speed technologies such as AlGaAs/GaAs HBTs. However, many of these circuits place conflicting demands on the device characteristics. We present device and circuit results using a hybrid of our digital and microwave HBT processes. This process results in high yield, high performance devices and circuits and is flexible enough to easily incorporate various epitaxial structures required by different chips. It also provides access to Schottky diodes allowing ADCs and shock-line structures to be fabricated with these HBTs
Keywords :
III-V semiconductors; aluminium compounds; analogue-digital conversion; circuit optimisation; digital communication; gallium arsenide; heterojunction bipolar transistors; integrated circuit yield; microwave bipolar transistors; multiplexing equipment; optical communication equipment; wavelength division multiplexing; 30 Gbit/s; ADCs; AlGaAs-GaAs; Schottky diodes; device characteristics; epitaxial structures; hybrid digital/microwave HBTs; optical communications circuits; shock-line structures; yield; Bit rate; Fabrication; Gallium arsenide; Heterojunction bipolar transistors; Implants; Microwave circuits; Microwave communication; Multiplexing; Optical amplifiers; Schottky diodes;
Conference_Titel :
Electron Devices Meeting, 1995. IEDM '95., International
Conference_Location :
Washington, DC
Print_ISBN :
0-7803-2700-4
DOI :
10.1109/IEDM.1995.499339
