DocumentCode :
1657779
Title :
253-GHz fmax AlGaAs/GaAs HBT with Ni/Ti/Pt/Ti/Pt-contact and L-shaped base electrode
Author :
Yanagihara, Manabu ; Sakai, Hiroyuki ; Ota, Yorito ; Tanabe, Mitsuru ; Inoue, Kaoru ; Tamura, Akiyoshi
Author_Institution :
Electron. Res. Lab., Matsushita Electron. Corp., Osaka, Japan
fYear :
1995
Firstpage :
807
Lastpage :
810
Abstract :
We have developed a 253 GHz fmax AlGaAs/GaAs HBT with a C-doped (4×1019 cm-3) base layer, using two techniques to decrease the base resistance (RB): a new base ohmic contact system of Ni/Ti/Pt/Ti/Pt for the low contact resistivity and an L-shaped base electrode for the low base electrode resistance. To our knowledge, this fmax, value is the highest in GaAs based HBTs with the C-doped base layer. These techniques are very promising for high fmax HBTs with even the moderately doped base layer
Keywords :
III-V semiconductors; aluminium compounds; contact resistance; gallium arsenide; heterojunction bipolar transistors; millimetre wave bipolar transistors; nickel; ohmic contacts; platinum; semiconductor device reliability; titanium; 253 GHz; AlGaAs-GaAs; HBT; L-shaped base electrode; Ni-Ti-Pt-Ti-Pt; base electrode resistance; base ohmic contact system; base resistance; contact resistivity; high fmax devices; Alloying; Conductivity; Contact resistance; Electrodes; Fabrication; Gallium arsenide; Gold; Heterojunction bipolar transistors; Ohmic contacts; Temperature;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting, 1995. IEDM '95., International
Conference_Location :
Washington, DC
ISSN :
0163-1918
Print_ISBN :
0-7803-2700-4
Type :
conf
DOI :
10.1109/IEDM.1995.499340
Filename :
499340
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1657779
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