Title :
Model for degradation of GaAs/AlGaAs HBTs under temperature and current stress
Author_Institution :
Corp. R&D, Texas Instrum. Inc., Dallas, TX, USA
Abstract :
The similarities between GaAs/AlGaAs heterojunction bipolar transistors (HBTs) and GaAs-based light-emitting diodes (LEDs) and laser diodes (LDs) under current and temperature stress are demonstrated. Electroluminescence on HBTs with degraded current gain shows a marked decrease in light emission. One device which suffered rapid degradation in current gain also showed a ⟨110⟩ dark line defect (DLD). Finally, an equation used to model light output as a function of time under bias stress in LEDs and LDs was modified to model collector current vs. time for HBTs under bias stress. An excellent fit to the data is shown
Keywords :
III-V semiconductors; aluminium compounds; electroluminescence; gallium arsenide; heterojunction bipolar transistors; semiconductor device models; GaAs-AlGaAs; current gain; current stress; dark line defect; degradation; electroluminescence; heterojunction bipolar transistors; laser diodes; light emission; light-emitting diodes; model; temperature stress; Degradation; Electroluminescence; Electroluminescent devices; Feeds; Gallium arsenide; Heterojunction bipolar transistors; Light emitting diodes; Spontaneous emission; Stress; Temperature;
Conference_Titel :
Electron Devices Meeting, 1995. IEDM '95., International
Conference_Location :
Washington, DC
Print_ISBN :
0-7803-2700-4
DOI :
10.1109/IEDM.1995.499341
