DocumentCode :
1657886
Title :
Hydrogen passivation effects on performance of visible thin-film light-emitting diodes (TFLEDs)
Author :
Lee, Jong-Wook ; Hur, Sung-Hoi ; Lim, Koeng Su
Author_Institution :
Dept. of Electr. Eng., Korea Adv. Inst. of Sci. & Technol., Taejon, South Korea
fYear :
1995
Firstpage :
825
Lastpage :
828
Abstract :
The effects of hydrogen passivation on the performance of visible thin-film light-emitting diodes (TFLEDs) have been investigated. The TFLED with hydrogen passivation exhibits lower threshold voltage (by about 3 V), higher brightness (about 33 times), and much shorter electroluminescence (EL) peak wavelength (from 704.5 nm to 600 nm) and higher EL intensity than that without hydrogen passivation
Keywords :
brightness; electroluminescence; light emitting diodes; passivation; 600 to 704.5 nm; EL intensity; H2; brightness; electroluminescence peak wavelength; passivation effects; threshold voltage; visible thin-film light-emitting diodes; Brightness; Circuits; Hydrogen; Light emitting diodes; PIN photodiodes; Passivation; Photonic band gap; Semiconductor thin films; Thin film transistors; Threshold voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting, 1995. IEDM '95., International
Conference_Location :
Washington, DC
ISSN :
0163-1918
Print_ISBN :
0-7803-2700-4
Type :
conf
DOI :
10.1109/IEDM.1995.499344
Filename :
499344
Link To Document :
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