Fabrication of low-temperature bottom-gate poly-Si TFTs on large-area substrate by linear-beam excimer laser crystallization and ion doping method

Author

Hayashi, H. ; Kunii, M. ; Suzuki, N. ; Kanaya, Y. ; Kuki, M. ; Minegishi, M. ; Urazono, T. ; Fujino, M. ; Noguchi, T. ; Yamazaki, M.

Author_Institution

Sony Corp., Kanagawa, Japan

fYear

1995

Firstpage

829

Lastpage

832

Abstract

A novel crystallization procedure of Si films using a linear-beam excimer laser combined with a non-mass-separated ion doping method on a large-area is proposed for fabrication of poly-Si TFTs with maximum process temperature of 400°C. Fabricated TFTs show sufficiently high mobilities to drive peripheral circuitry and yet retain a low leakage current suitable to pixel transistors. TFTs´ on-current deviation of well under ±20% has been obtained for both nand p-channel TFTs over an entire substrate. Long-term reliability of the TFTs has also been confirmed using a CMOS ring oscillator

Keywords

CMOS digital integrated circuits; elemental semiconductors; laser materials processing; leakage currents; semiconductor device reliability; semiconductor doping; silicon; thin film transistors; 400 degC; CMOS ring oscillator; Si; bottom-gate polysilicon TFTs; large-area substrate; leakage current; linear-beam excimer laser crystallization; long-term reliability; maximum process temperature; non-mass-separated ion doping method; on-current deviation; Crystallization; Doping; Grain size; Laboratories; Laser beams; Optical device fabrication; Pulsed laser deposition; Semiconductor films; Substrates; Thin film transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1995. IEDM '95., International

Conference_Location

Washington, DC

ISSN

0163-1918

Print_ISBN

0-7803-2700-4

Type

conf

DOI

10.1109/IEDM.1995.499345

Filename

499345