Title :
A 2.4-in. driver-integrated full-color quarter VGA (320×3×240) poly-Si TFT LCD by a novel low temperature process using a combination of ELA and RTA technology
Author :
Morimoto, Y. ; Hirano, K. ; Abe, H. ; Kuwahara, T. ; Hasegawa, I. ; Yuda, S. ; Sotani, N. ; Yoneda, K.
Author_Institution :
PS Project, Sanyo Electr. Co. Ltd., Gifu, Japan
Abstract :
A novel low temperature combination technology of ELA, which is used for the crystallization of a-Si, and RTA, which is used for both the activation of dopants and the silicidation of a polycide electrode, was developed. The poly-Si TFTs fabricated by this novel technology exhibit excellent characteristics (μFE; 45 cm2V·s for n-ch, 20 cm2V·s for p-ch). Using this novel technology we have successfully fabricated a 2.4-in full color quarter VGA (320×3×240) poly-Si TFT LCD with fully integrated peripheral driving circuits
Keywords :
MOS integrated circuits; colour graphics; crystallisation; integrated circuit technology; laser beam annealing; liquid crystal displays; rapid thermal annealing; silicon; thin film transistors; 2.4 in; RTA technology; Si-SiO2; crystallization; driver-integrated LCD; excimer laser annealing; full-color quarter VGA; low temperature process; poly-Si TFT; polycide electrode silicidation; polysilicon TFT fabrication; video graphics array; Crystallization; Electrodes; Fabrication; Glass; Laser beams; Rapid thermal annealing; Substrates; Tellurium; Temperature; Thin film transistors;
Conference_Titel :
Electron Devices Meeting, 1995. IEDM '95., International
Conference_Location :
Washington, DC
Print_ISBN :
0-7803-2700-4
DOI :
10.1109/IEDM.1995.499347
