Title :
VGA driving with low temperature processed poly Si TFTs
Author :
Morita, T. ; Yamamoto, Y. ; Itoh, M. ; Yoneda, H. ; Yamane, Y. ; Tsuchimoto, S. ; Funada, F. ; Awane, K.
Author_Institution :
LCD Labs., Sharp Corp., Tenri, Japan
Abstract :
We have successfully driven a full monolithic LCD equivalent to a 5.6 inch VGA display with low temperature process poly-Si TFTs of which field effect mobility is 100 cm2/Vs for n-ch TFT, and 53 cm 2/Vs for p-ch TFT. Laser crystallization and newly developed self aligning off-set gate processing are implemented
Keywords :
CMOS digital integrated circuits; MOSFET; crystallisation; driver circuits; elemental semiconductors; integrated circuit technology; laser materials processing; liquid crystal displays; silicon; thin film transistors; 5.6 in; AMLCD; Si; VGA driving; active matrix LCD; laser crystallization; low temperature processed TFTs; monolithic LCD; poly Si TFTs; polysilicon TFT; self aligning offset gate processing; Active matrix liquid crystal displays; Aluminum; Annealing; Crystallization; Doping; Electrodes; Oxidation; Plasma temperature; Space technology; Thin film transistors;
Conference_Titel :
Electron Devices Meeting, 1995. IEDM '95., International
Conference_Location :
Washington, DC
Print_ISBN :
0-7803-2700-4
DOI :
10.1109/IEDM.1995.499348
