Fabrication of a single nanowire circuit made of semiconducting NiS2 by direct-write electron beam lithography and observation of metallic conduction

The results from electrical measurements on an individual NiS₂ nanowire produced by an innovative method of direct-write electron beam lithography (EBL) are discussed in this presentation. The technique relies on the ability of a metal precursor to serve as an e-beam resist while patterning, which may be transformed to a desired nanomaterial in subsequent step(s). The I-V data from the fabricated circuit was linear and the resistivity estimated was approximately two orders of magnitude less compared to the bulk NiS₂ resistivity. This is first direct evidence of metallicity of a NiS₂ nanowire at room temperature.