Title :
Performance and reliability concerns of ultra-thin SOI and ultra-thin gate oxide MOSFETs
Author :
Toriumi, Akira ; Koga, Junji ; Satake, Hideki ; Ohata, Akiko
Author_Institution :
ULSI Res. Labs., Toshiba Corp., Kawasaki, Japan
Abstract :
Inversion layer mobility in thin SOI MOSFETs has been investigated from the viewpoint of the SOI thickness effects on device performance. Next, thin oxide properties such as Qbd, Vgt, Dit, and SILC have been studied as a function of oxide thickness. It is demonstrated that there is a small window for high reliability in ultra-thin SiO2 regime
Keywords :
MOSFET; carrier mobility; inversion layers; semiconductor device reliability; silicon-on-insulator; SOI thickness effects; device performance; inversion layer mobility; oxide thickness; reliability; ultra-thin SOI MOSFET; ultra-thin gate oxide MOSFET; Capacitive sensors; Degradation; Design for quality; Electrical resistance measurement; Laboratories; MOSFETs; Phonons; Raman scattering; Temperature; Ultra large scale integration;
Conference_Titel :
Electron Devices Meeting, 1995. IEDM '95., International
Conference_Location :
Washington, DC
Print_ISBN :
0-7803-2700-4
DOI :
10.1109/IEDM.1995.499349
