• DocumentCode
    165806
  • Title

    Deca-nanoscale maximum gate length of plasma wave transistor for operating terahertz emitter based on strained silicon platform

  • Author

    Jong Yul Park ; Sung-Ho Kim ; Kyung Rok Kim

  • Author_Institution
    Sch. of Electr. & Comput. Eng., Ulsan Nat. Inst. of Sci. & Technol., Ulsan, South Korea
  • fYear
    2014
  • fDate
    18-21 Aug. 2014
  • Firstpage
    150
  • Lastpage
    153
  • Abstract
    In this work, we have shown that plasma-wave transistor (PWT) operates as a terahertz (THz) emitter below maximum gate length (Lmax). Because the channel mobility (μ) of strained silicon (sSi) is higher than silicon (Si), we investigate how emission frequency range and Lmax of sSi PWT THz emitter are improved compared to Si PWT THz emitter by analyzing the effect of momentum relaxation time (τp) and electron effective mass (m) on a design window of PWT THz emitter.
  • Keywords
    nanoelectronics; plasma devices; plasma waves; submillimetre wave transistors; terahertz wave devices; PWT THz emitter; Si; deca-nanoscale maximum gate length; design window; electron effective mass; emission frequency range; momentum relaxation time effect; plasma wave transistor; strained silicon platform; terahertz emitter; Field effect transistors; Logic gates; Plasma waves; Security; Silicon;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Nanotechnology (IEEE-NANO), 2014 IEEE 14th International Conference on
  • Conference_Location
    Toronto, ON
  • Type

    conf

  • DOI
    10.1109/NANO.2014.6968155
  • Filename
    6968155
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=165806