Title :
Si substrate controlled in-plane synthesis of self-assembled nanostructures catalyzed by Au nanoparticles
Author :
Zhang, Zhou ; Wong, Lai Mun ; Wang, Shijie ; Wu, Tom
Author_Institution :
Div. of Phys. & Appl. Phys., Nanyang Technol. Univ., Singapore, Singapore
Abstract :
Self-assembled in-plane fabrication of Cu3Si and Mg2SiO4 nanostructures were achieved on Si substrates by a simple vapor transport method. The morphologies of the as fabricated structures were controlled by the surface orientation of the substrates, i.e. Cu3Si nanowires (NWs), nanosquares (NSs), and nanotriangles (NTs) were synthesized on Si (110), (100), and (111) substrates, respectively. In the case of Mg2SiO4, NWs with specific growth directions were observed. All the sides of the NTs & NSs and the growth directions of the NWs are along Si <110>, indicating that the symmetries of nanostructure growth break into 2, 4, and 6 folds on Si (110), (100), and (111). Au nanoparticles (NPs) were used as the catalyst and played critical roles by absorbing metal vapor and breaking the barrier of native oxide layer on Si substrates. The positions of the as fabricated nanostructures were controlled by the Au NPs and the growth of Mg2SiO4 NWs can work as a mechanism for transporting Au NPs along specific directions.
Keywords :
catalysis; copper alloys; elemental semiconductors; gold; magnesium compounds; nanoparticles; nanowires; self-assembly; silicon; silicon alloys; surface morphology; Au; Cu3Si; Mg2SiO4; Si; Si(100) substrate; Si(110) substrate; Si(111) substrate; absorbing metal vapor; catalysis; catalyst; gold nanoparticles; nanosquares; nanotriangles; nanowires; native oxide layer; self-assembled in-plane fabrication; self-assembled nanostructures; silicon substrate; surface orientation; vapor transport method; Fabrication; Gold; Nanoparticles; Nanostructures; Scanning electron microscopy; Self-assembly; Substrates; Surface morphology; Transmission electron microscopy; X-ray scattering;
Conference_Titel :
Nanoelectronics Conference (INEC), 2010 3rd International
Conference_Location :
Hong Kong
Print_ISBN :
978-1-4244-3543-2
Electronic_ISBN :
978-1-4244-3544-9
DOI :
10.1109/INEC.2010.5424568