• DocumentCode
    1658132
  • Title

    Development of periodically oriented gallium nitride

  • Author

    Hite, Jennifer K. ; Twigg, Mark E. ; Bassim, Nabil D. ; Mastro, Michael A. ; Freitas, Jaime A., Jr. ; Meyer, Jerry R. ; Vurgaftman, Igor ; O´Connor, Shawn ; Condon, Nicholas J. ; Kub, Francis J. ; Bowman, Steven R. ; Eddy, Charles R., Jr.

  • Author_Institution
    U.S. Naval Res. Lab., Washington, DC, USA
  • fYear
    2012
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    Methods for growing periodically alternating polarities of GaN on GaN substrates have been developed. The resulting periodically oriented samples can be extended to thick growth, allowing their use in non-linear optics.
  • Keywords
    III-V semiconductors; MOCVD coatings; gallium compounds; nonlinear optics; optical materials; vapour phase epitaxial growth; wide band gap semiconductors; GaN-GaN; nonlinear optics; periodically alternating polarity; periodically oriented gallium nitride; thick growth; Frequency conversion; Gallium nitride; Nonlinear optics; Scanning electron microscopy; Substrates;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics (CLEO), 2012 Conference on
  • Conference_Location
    San Jose, CA
  • Print_ISBN
    978-1-4673-1839-6
  • Type

    conf

  • Filename
    6325830
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1658132