Title :
Development of periodically oriented gallium nitride
Author :
Hite, Jennifer K. ; Twigg, Mark E. ; Bassim, Nabil D. ; Mastro, Michael A. ; Freitas, Jaime A., Jr. ; Meyer, Jerry R. ; Vurgaftman, Igor ; O´Connor, Shawn ; Condon, Nicholas J. ; Kub, Francis J. ; Bowman, Steven R. ; Eddy, Charles R., Jr.
Author_Institution :
U.S. Naval Res. Lab., Washington, DC, USA
Abstract :
Methods for growing periodically alternating polarities of GaN on GaN substrates have been developed. The resulting periodically oriented samples can be extended to thick growth, allowing their use in non-linear optics.
Keywords :
III-V semiconductors; MOCVD coatings; gallium compounds; nonlinear optics; optical materials; vapour phase epitaxial growth; wide band gap semiconductors; GaN-GaN; nonlinear optics; periodically alternating polarity; periodically oriented gallium nitride; thick growth; Frequency conversion; Gallium nitride; Nonlinear optics; Scanning electron microscopy; Substrates;
Conference_Titel :
Lasers and Electro-Optics (CLEO), 2012 Conference on
Conference_Location :
San Jose, CA
Print_ISBN :
978-1-4673-1839-6
