DocumentCode :
1658139
Title :
The etched surface of sputtered zinc oxide and its relationship to fractal growth and surface wave properties
Author :
Hickernell, F.S. ; Hickenell, T.S.
Author_Institution :
Motorola Inc., Scottsdale, AZ, USA
fYear :
1992
Firstpage :
373
Abstract :
The etch characteristics of sputtered zinc oxide are used as a measure of the microstructural integrity of the films and are related to acoustical and optical surface wave propagation properties. Examination of the etched surface of thin-film ZnO reveals a defect structure which points to a fractal growth mechanism. The observed fractal dimension of the film surface is in the 1.5 to 1.6 range for high-quality zinc oxide grown on oxidized silicon. By controlled etching to produce surface roughness, changes in the loss and frequency of surface acoustic waves and in the loss of guided optical waves are observed and are related to theoretical models
Keywords :
II-VI semiconductors; etching; fractals; optical waveguides; piezoelectric semiconductors; piezoelectric thin films; sputtered coatings; surface acoustic waves; surface topography; zinc compounds; II-VI semiconductor; defect structure; etched surface; fractal growth; microstructural integrity; models; optical surface wave propagation; piezoelectric thin film; sputered ZnO; surface acoustic waves; surface roughness; Acoustic measurements; Fractals; Optical films; Optical losses; Optical surface waves; Rough surfaces; Sputter etching; Surface acoustic waves; Surface roughness; Zinc oxide;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Ultrasonics Symposium, 1992. Proceedings., IEEE 1992
Conference_Location :
Tucson, AZ
Print_ISBN :
0-7803-0562-0
Type :
conf
DOI :
10.1109/ULTSYM.1992.275979
Filename :
275979
Link To Document :
بازگشت