Nanoscale vacuum channel transistor

Despite of high gain, fast speed, and superior distortion immunity, vacuum electronic devices have been replaced by solid-state devices such as transistors due to their poor reliability and high power consumption. Such constraints mostly appear as it is bulky and discrete. The weaknesses of the traditional vacuum tubes are solved if the vacuum tubes are made by silicon nanofabrication technologies and the operation mechanism is shifted from thermionic emission into field emission. In this work, sub 100-nm vacuum tubes are fabricated by using conventional silicon process. The gap formation methods beyond sub-lithographic limit are suggested and its current-voltage characteristics are presented.