Investigation of PECVD silicon nitride films for surface wave devices

Author

Lee, K.R. ; Malocha, D.C. ; Sundaram, K.B.

Author_Institution

Dept. of Electr. & Comput. Eng., Univ. of Central Florida, Orlando, FL, USA

fYear

1992

Firstpage

369

Abstract

Silicon nitride thin films deposited by plasma enhanced chemical vapor deposition (PECVD) are investigated for application to surface acoustic wave (SAW) devices. A matrix of deposition conditions is investigated and the deposition parameters for high-quality films applicable to SAW technology are found. It is confirmed that films having low optical attenuation also have correspondingly good acoustic properties. The experimental procedures for depositing the silicon nitride films, the parameters for high-quality film deposition, and experimental results on the acoustic loss and velocity dispersion are presented. Results indicate low SAW propagation loss and velocity dispersion correlated well with previous investigations

Keywords

piezoelectric thin films; plasma CVD; plasma CVD coatings; silicon compounds; surface acoustic wave devices; surface acoustic waves; SAW devices; Si₃N₄ films; acoustic loss; acoustic velocity dispersion; deposition conditions; deposition parameters; high-quality films; plasma enhanced chemical vapor deposition; propagation loss; Optical attenuators; Optical films; Optical surface waves; Semiconductor films; Semiconductor thin films; Silicon; Sputtering; Surface acoustic wave devices; Surface acoustic waves; Surface waves;

fLanguage

English

Publisher

ieee

Conference_Titel

Ultrasonics Symposium, 1992. Proceedings., IEEE 1992

Conference_Location

Tucson, AZ

Print_ISBN

0-7803-0562-0

Type

conf

DOI

10.1109/ULTSYM.1992.275980

Filename

275980