• DocumentCode
    1658192
  • Title

    Growth of the copper oxide nanowires from copper thin films deposited on silicon substrate

  • Author

    Park, Yeon-Woong ; Seong, Nak-Jin ; Yoon, Soon-Gil

  • Author_Institution
    Sch. of Nano Sci. & Technol., Chungnam Nat. Univ., Daejeon, South Korea
  • fYear
    2010
  • Firstpage
    122
  • Lastpage
    123
  • Abstract
    The growth mechanism of the CuO single crystal NWs for future device applications has been demonstrated using the copper films deposited on CuO buffered SiO2/Si substrates. The indispensible requirements for the CuO NWs growth from the copper films are the presence of the compressive stress in the copper films and the presence of the Cu2O seed phase on the copper films at a high temperature in air.
  • Keywords
    copper compounds; nanofabrication; nanowires; narrow band gap semiconductors; semiconductor growth; semiconductor quantum wires; CuO; CuO-SiO2-Si; Si; compressive stress; copper oxide nanowires; copper thin films; growth mechanism; silicon substrate; single crystal; Adhesives; Annealing; Copper; Nanowires; Semiconductor films; Semiconductor thin films; Silicon; Sputtering; Substrates; X-ray scattering;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Nanoelectronics Conference (INEC), 2010 3rd International
  • Conference_Location
    Hong Kong
  • Print_ISBN
    978-1-4244-3543-2
  • Electronic_ISBN
    978-1-4244-3544-9
  • Type

    conf

  • DOI
    10.1109/INEC.2010.5424570
  • Filename
    5424570
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1658192