Title :
Back gated CMOS on SOIAS for dynamic threshold voltage control
Author :
Yang, Isabel Y. ; Vieri, Carlin ; Chandrakasan, Anantha ; Antoniadis, Dimitri A.
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., MIT, Cambridge, MA, USA
Abstract :
Simultaneous reduction of supply and threshold voltages for low power design without suffering performance losses will eventually reach the limit of diminishing returns as static power dissipation becomes a significant portion of the total power equation. In order to meet the opposing requirements of high performance and low power, a dynamic threshold voltage control scheme is needed. A novel SOI technology was developed whereby a back-gate was used to control the threshold voltage of the front-gate; this concept was demonstrated on a selectively scaled CMOS process
Keywords :
CMOS integrated circuits; SIMOX; integrated circuit technology; silicon-on-insulator; wafer bonding; BESOI; SOI technology; SOI with active substrate; SOIAS; Si; back gated CMOS; dynamic threshold voltage control; low power design; selectively scaled CMOS process; static power dissipation; CMOS process; CMOS technology; Computer science; Etching; Semiconductor films; Silicon on insulator technology; Substrates; Threshold voltage; Voltage control; Wafer bonding;
Conference_Titel :
Electron Devices Meeting, 1995. IEDM '95., International
Conference_Location :
Washington, DC
Print_ISBN :
0-7803-2700-4
DOI :
10.1109/IEDM.1995.499356
