• DocumentCode
    1658243
  • Title

    Threshold voltage adjustment in SOI MOSFETs by employing tantalum for gate material

  • Author

    Shimada, Hisayuki ; Hirano, Yuichi ; Ushiki, Takeo ; Ohmi, Tadahiro

  • Author_Institution
    Dept. of Electron. Eng., Tohoku Univ., Sendai, Japan
  • fYear
    1995
  • Firstpage
    881
  • Lastpage
    884
  • Abstract
    The threshold voltages of n-channel and p-channel thin-film Si-on-Insulator (SOI) MOSFETs have been controlled by employing Tantalum (Ta) for gate materials in 1 V applications. The threshold voltage control in SOI MOSFETs by the work function of gate material, that is, work function engineering is needed. In order to suppress the reaction between Ta and gate oxide, low-temperature processing after the gate oxide step was successfully established
  • Keywords
    MOSFET; silicon-on-insulator; tantalum; thin film transistors; work function; 1 V; SOI MOSFETs; Ta gate material; Ta-SiO2-Si; low-temperature processing; n-channel TFT; p-channel TFT; thin-film MOSFET; threshold voltage adjustment; work function engineering; CMOS process; Conductivity; Copper; Electrodes; Impurities; Intelligent systems; Laboratories; MOSFET circuits; Threshold voltage; Voltage control;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1995. IEDM '95., International
  • Conference_Location
    Washington, DC
  • ISSN
    0163-1918
  • Print_ISBN
    0-7803-2700-4
  • Type

    conf

  • DOI
    10.1109/IEDM.1995.499357
  • Filename
    499357
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1658243