Title :
Threshold voltage adjustment in SOI MOSFETs by employing tantalum for gate material
Author :
Shimada, Hisayuki ; Hirano, Yuichi ; Ushiki, Takeo ; Ohmi, Tadahiro
Author_Institution :
Dept. of Electron. Eng., Tohoku Univ., Sendai, Japan
Abstract :
The threshold voltages of n-channel and p-channel thin-film Si-on-Insulator (SOI) MOSFETs have been controlled by employing Tantalum (Ta) for gate materials in 1 V applications. The threshold voltage control in SOI MOSFETs by the work function of gate material, that is, work function engineering is needed. In order to suppress the reaction between Ta and gate oxide, low-temperature processing after the gate oxide step was successfully established
Keywords :
MOSFET; silicon-on-insulator; tantalum; thin film transistors; work function; 1 V; SOI MOSFETs; Ta gate material; Ta-SiO2-Si; low-temperature processing; n-channel TFT; p-channel TFT; thin-film MOSFET; threshold voltage adjustment; work function engineering; CMOS process; Conductivity; Copper; Electrodes; Impurities; Intelligent systems; Laboratories; MOSFET circuits; Threshold voltage; Voltage control;
Conference_Titel :
Electron Devices Meeting, 1995. IEDM '95., International
Conference_Location :
Washington, DC
Print_ISBN :
0-7803-2700-4
DOI :
10.1109/IEDM.1995.499357
