Flexible thin flim transistor using printed single-walled carbon nanotubes

Author

Jang, Suk-Jae ; Ahn, Jong-Hyun

Author_Institution

SKKU Adv. Inst. of Nanotechnol., Sungkyunkwan Univ., Suwon, South Korea

fYear

2010

Firstpage

720

Lastpage

721

Abstract

Flexible thin film transistors (TFT) were fabricated with randomly oriented single-walled carbon nanotubes (SWNTs) synthesized selectively on a designed array of catalyst photoresists using the plasma-enhanced chemical vapor deposition (PECVD) method. The process involves SWNTs growth on SiO₂/Si substrates, followed by transfer-printing of tubes onto thin, flexible sheets of plastic. Electrical measurements on the resulting devices reveal good characteristics. These results might be of interest for various applications of SWNTs in flexible electronics.

Keywords

carbon nanotubes; catalysis; flexible electronics; photoresists; plasma CVD; thin film transistors; C; PECVD; Si; SiO₂-Si; SiO₂-Si substrates; TFT; catalyst photoresists; electrical measurements; flexible electronics; flexible thin flim transistor; plasma-enhanced chemical vapor deposition; printed single-walled carbon nanotubes; randomly oriented single-walled carbon nanotubes; thin flexible plastic sheets; transfer-printing; Carbon nanotubes; Chemical vapor deposition; Plasma applications; Plasma chemistry; Plasma devices; Plasma measurements; Plasma properties; Resists; Substrates; Thin film transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Nanoelectronics Conference (INEC), 2010 3rd International

Conference_Location

Hong Kong

Print_ISBN

978-1-4244-3543-2

Electronic_ISBN

978-1-4244-3544-9

Type

conf

DOI

10.1109/INEC.2010.5424575

Filename

5424575