Title :
Cross-section control of stacked nanowires formed by Bosch process and oxidation
Author :
Zuo, Xuan ; Wang, Tao ; Ng, Ricky M Y ; He, Jin ; Chan, Mansllll
Author_Institution :
Hong Kong Univ. of Sci. & Technol., Kowloon, China
Abstract :
The cross-sectional shape of the stacked silicon nanowires (SiNWs) formed by the Bosch process and stress-limited oxidation is studied in this paper. Under the condition of high temperature oxidation, the resulting nanowires highly resemble the initial shaped resulting by the Bosch process. The effects of etching and passivation in the Bosch process is modeled to provide a guideline to control the cross-section of the stacked nanowires.
Keywords :
elemental semiconductors; etching; nanowires; oxidation; passivation; silicon; Bosch process; Si; cross-section control; etching; passivation; stacked silicon nanowires; stress-limited oxidation; Etching; Geometry; Nanowires; Oxidation; Passivation; Predictive models; Shape control; Silicon; Solid modeling; Transistors;
Conference_Titel :
Nanoelectronics Conference (INEC), 2010 3rd International
Conference_Location :
Hong Kong
Print_ISBN :
978-1-4244-3543-2
Electronic_ISBN :
978-1-4244-3544-9
DOI :
10.1109/INEC.2010.5424576
