DocumentCode
1658337
Title
Cross-section control of stacked nanowires formed by Bosch process and oxidation
Author
Zuo, Xuan ; Wang, Tao ; Ng, Ricky M Y ; He, Jin ; Chan, Mansllll
Author_Institution
Hong Kong Univ. of Sci. & Technol., Kowloon, China
fYear
2010
Firstpage
130
Lastpage
131
Abstract
The cross-sectional shape of the stacked silicon nanowires (SiNWs) formed by the Bosch process and stress-limited oxidation is studied in this paper. Under the condition of high temperature oxidation, the resulting nanowires highly resemble the initial shaped resulting by the Bosch process. The effects of etching and passivation in the Bosch process is modeled to provide a guideline to control the cross-section of the stacked nanowires.
Keywords
elemental semiconductors; etching; nanowires; oxidation; passivation; silicon; Bosch process; Si; cross-section control; etching; passivation; stacked silicon nanowires; stress-limited oxidation; Etching; Geometry; Nanowires; Oxidation; Passivation; Predictive models; Shape control; Silicon; Solid modeling; Transistors;
fLanguage
English
Publisher
ieee
Conference_Titel
Nanoelectronics Conference (INEC), 2010 3rd International
Conference_Location
Hong Kong
Print_ISBN
978-1-4244-3543-2
Electronic_ISBN
978-1-4244-3544-9
Type
conf
DOI
10.1109/INEC.2010.5424576
Filename
5424576
Link To Document