Title :
Well concentration: a novel scaling limitation factor derived from DRAM retention time and its modeling
Author :
Hamamoto, T. ; Sugiura, S. ; Sawada, S.
Author_Institution :
ULSI Res. Labs., Toshiba Corp., Kawasaki, Japan
Abstract :
A novel scaling limitation factor derived from DRAM retention time and its modeling has been proposed. So far, the well concentration has been optimized from the viewpoint of the scaling of the transistor dimensions. However, it has been found that the DRAM retention time strongly depends on the well concentration. Increase of the well concentration enhances thermionic field emission (TFE) current from the storage node. This leakage current makes “tail distribution” of the retention time. Therefore, the well concentration must be optimized taking into account the retention time distribution
Keywords :
DRAM chips; integrated circuit modelling; leakage currents; thermionic electron emission; DRAM retention time; leakage current; scaling limitation factor; storage node; tail distribution; thermionic field emission current; time distribution; transistor dimensions; well concentration; Circuits; Current measurement; Epitaxial layers; Laboratories; Leakage current; Random access memory; Semiconductor devices; Substrates; Thermionic emission; Ultra large scale integration;
Conference_Titel :
Electron Devices Meeting, 1995. IEDM '95., International
Conference_Location :
Washington, DC
Print_ISBN :
0-7803-2700-4
DOI :
10.1109/IEDM.1995.499365
