DocumentCode :
1658687
Title :
Modeling of 3-D trench structures with corrected effective medium approximation for model-based infrared reflectrometry
Author :
Zhang, Chuanwei ; Liu, Shiyuan ; Shi, Tielin
Author_Institution :
Wuhan Nat. Lab. for Optoelectron., Huazhong Univ. of Sci. & Technol., Wuhan, China
fYear :
2010
Firstpage :
146
Lastpage :
147
Abstract :
Model-based infrared reflectrometry (MBIR) has been introduced recently for measuring deep trench structures in microelectronics. The success of this technique relies heavily on accurate modeling and fast calculation of the infrared metrology process, which still remains as one challenge. In this paper, we propose a modeling method named corrected effective medium approximation (CEMA) for accurate and fast reflectivity calculation of three-dimensional (3-D) trench structures. The independence of the CEMA on trench depth, azimuth of incidence and the polarization state has been investigated to demonstrate the validity of the CEMA.
Keywords :
integrated circuit measurement; integrated circuit modelling; isolation technology; 3D trench structures; corrected effective medium approximation; incidence azimuth; microelectronics; model-based infrared reflectrometry; polarization state; reflectivity calculation; trench depth; Azimuth; Equations; Metrology; Optical films; Optical polarization; Optical refraction; Optical variables control; Reflectivity; Refractive index; Tellurium;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Nanoelectronics Conference (INEC), 2010 3rd International
Conference_Location :
Hong Kong
Print_ISBN :
978-1-4244-3543-2
Electronic_ISBN :
978-1-4244-3544-9
Type :
conf
DOI :
10.1109/INEC.2010.5424588
Filename :
5424588
Link To Document :
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