Title :
Impact of geometry aspect ratio on 10-nm gate-all-around silicon-germanium nanowire field effect transistors
Author :
Pei-Jung Chao ; Yiming Li
Author_Institution :
Parallel & Sci. Comput. Lab. & Inst. of Biomed. Eng., Nat. Chaio Tung Univ., Hsinchu, Taiwan
Abstract :
In this paper, we study electrical characteristics of gate-all-around (GAA) silicon-germanium (SiGe) nanowire field effect transistors (NWFETS) with different aspect ratio (AR) of channel. Device characteristics: the subthreshold swing (SS), the drain induced barrier lowering (DIBL), and the ION/IOFF ratio are simulated by using three-dimensional quantum mechanically corrected device simulation. Electrical characteristics of 10-nm-gate GAA Si1-xGex NWFET devices are explored with respect to different thickness of SiGe and Ge´s mole fraction. It is investigated that an ellipse-shaped channel with a small aspect ratio possesses better DC characteristics, compared with the one which has large AR due to its good gate controllability.
Keywords :
Ge-Si alloys; field effect transistors; nanowires; semiconductor device models; AR; DC characteristic; DIBL; GAA; ION/IOFF ratio; NWFET; SS; SiGe; drain induced barrier lowering; ellipse-shaped channel; gate controllability; gate-all-around silicon-germanium nanowire field effect transistor; geometry aspect ratio; mole fraction; size 10 nm; subthreshold swing; three-dimensional quantum mechanically corrected device simulation; Computational modeling; Electric variables; Field effect transistors; Logic gates; Mathematical model; Silicon; Solid modeling;
Conference_Titel :
Nanotechnology (IEEE-NANO), 2014 IEEE 14th International Conference on
Conference_Location :
Toronto, ON
DOI :
10.1109/NANO.2014.6968188
