Title :
Integration of a novel high-voltage Giga-Hertz DMOS transistor into a standard CMOS process
Author :
Söderbärg, A. ; Edholm, B. ; Olsson, J. ; Masszi, F. ; Eklund, K.-H.
Author_Institution :
Dept. of Technol., Uppsala Univ., Sweden
Abstract :
A new type of DMOS transistor aimed at high voltage power amplifications in the Giga-Hertz region is integrated into a standard CMOS process. By optimising the design for high voltage and high frequency, remarkable good electrical behaviour is obtained. The frequency performance was measured to fT=4.6 GHz and fMAX=10 GHz for a device with a channel length of 0.3 μm and a breakdown voltage VBR⩾60 V. For a similar device fabricated on the same chip and using the same process flow, but designed to handle voltages above 300 V, fT=1.8 GHz and fMAX=3.2 GHz were measured
Keywords :
CMOS integrated circuits; S-parameters; circuit analysis computing; integrated circuit design; microwave field effect transistors; microwave power amplifiers; microwave power transistors; power MOSFET; power field effect transistors; 0.3 mum; 1.8 GHz; 10 GHz; 3.2 GHz; 300 V; 4.6 GHz; 60 V; DMOS transistor integration; TMA-MEDICI device simulation; breakdown voltage; channel length; design optimisation; electrical behaviour; frequency performance; high voltage power amplification; high-voltage GHz DMOS transistor; microwave circuit design simulation; scattering parameters; standard CMOS process; CMOS process; CMOS technology; Capacitance; Circuit simulation; Doping; Fluid flow measurement; Frequency measurement; Length measurement; Low voltage; Semiconductor device measurement;
Conference_Titel :
Electron Devices Meeting, 1995. IEDM '95., International
Conference_Location :
Washington, DC
Print_ISBN :
0-7803-2700-4
DOI :
10.1109/IEDM.1995.499379
