DocumentCode
1658901
Title
Complementary MOS structures for common mode EMI reduction
Author
Tran, Manh Hung ; Crebier, Jean-Christophe
Author_Institution
Grenoble Electr. Eng. Lab. (G2ELab), Grenoble Inst. of Technol., St. Martin d´´Heres, France
fYear
2009
Firstpage
1
Lastpage
10
Abstract
The paper deals with the management and the reduction of conducted common mode EMI noise in power converters. Especially, it is presented how complementary P-N MOSFET structures, used in a specific manner, are able of great and natural common mode current reductions. The advantages obtained by the use of complementary MOSFET topologies are balanced with the additional conduction losses that P MOSFETs are responsible of. The paper presents these issues based on simulation and practical results.
Keywords
CMOS integrated circuits; electromagnetic interference; network topology; power convertors; P-N MOSFET structures; common mode EMI reduction; complementary MOS structures; power converters; Circuit topology; Electromagnetic interference; Inverters; Leg; MOS capacitors; MOSFET circuits; Noise reduction; Passive filters; Power electronics; Switched-mode power supply; EMC/EMI; MOSFET; efficiency;
fLanguage
English
Publisher
ieee
Conference_Titel
Power Electronics and Applications, 2009. EPE '09. 13th European Conference on
Conference_Location
Barcelona
Print_ISBN
978-1-4244-4432-8
Electronic_ISBN
978-90-75815-13-9
Type
conf
Filename
5278674
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