DocumentCode
1658925
Title
Integration of Tensile-Strained Ge p-i-n Photodetector on Advanced CMOS Platform
Author
Wang, J. ; Loh, W.-Y. ; Zang, H. ; Yu, M.B. ; Chua, K.T. ; Loh, T.H. ; Ye, J.D. ; Yang, R. ; Wang, X.L. ; Lee, S.J. ; Cho, B.J. ; Lo, G.Q. ; Kwong, D.L.
Author_Institution
Inst. of Microelectron., Singapore
fYear
2007
Firstpage
1
Lastpage
3
Abstract
Tensile-strained Ge photodetector is realized on Si-substrate using novel SiSiGe compliant layer with two-step Ge-process. Monolithic integration of p-i-n detectors with low dark current (0.4 nA), responsivity (190 mA/W) and high speed (5 GHz) on Ge-CMOS platform is demonstrated, with Ge pMOSFET showing 2X Si hole mobility.
Keywords
CMOS integrated circuits; MOSFET; elemental semiconductors; germanium; hole mobility; integrated optoelectronics; p-i-n photodiodes; photodetectors; silicon; Ge pMOSFET; Si-Ge; advanced Ge-CMOS platform; current 0.4 nA; frequency 5 GHz; hole mobility; low dark current; monolithic integration; p-i-n photodetector; tensile-strained germanium photodetector; Annealing; Dark current; Detectors; Epitaxial growth; Germanium silicon alloys; MOSFET circuits; PIN photodiodes; Photodetectors; Silicon germanium; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Group IV Photonics, 2007 4th IEEE International Conference on
Conference_Location
Tokyo
Print_ISBN
978-1-4244-0934-1
Type
conf
DOI
10.1109/GROUP4.2007.4347664
Filename
4347664
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