• DocumentCode
    1658943
  • Title

    Spectral responsivity of vertical p-i-n photodiode of selectively grown Ge on silicon-on-insulator (SOI) platform

  • Author

    Park, Sungbong ; Ishikawa, Yasuhiko ; Tsuchizawa, Tai ; Watanabe, Toshifumi ; Yamada, Koji ; Itabashi, Seiichi ; Wada, Kazumi

  • Author_Institution
    Dept. of Mater. Eng., Univ. of Tokyo, Tokyo
  • fYear
    2007
  • Firstpage
    1
  • Lastpage
    3
  • Abstract
    We demonstrated vertical Ge p-i-n photodiodes on an SOI substrate by selective epitaxial growth. It is strongly suggested from the spectral responsivity that strain in selective Ge mesas would be relieved because of a small and stripe shape of Ge mesas.
  • Keywords
    epitaxial growth; p-i-n photodiodes; silicon-on-insulator; Ge-Si; selective epitaxial growth; silicon-on-insulator; spectral responsivity; vertical p-i-n photodiode; Absorption; Annealing; Capacitive sensors; Epitaxial growth; PIN photodiodes; Photonics; Silicon on insulator technology; Substrates; Temperature; Tensile strain;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Group IV Photonics, 2007 4th IEEE International Conference on
  • Conference_Location
    Tokyo
  • Print_ISBN
    978-1-4244-0934-1
  • Type

    conf

  • DOI
    10.1109/GROUP4.2007.4347665
  • Filename
    4347665
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1658943