Wall angle control of reactive ion etched features on a silicon substrate

This paper investigated the ability of the etched wall angle controllable. We used silicon with a patterned wet film photo resistance as a base substrate. A slider is fabricated by the reactive ion etching (RIE) process. In the RIE process, the controllable factors were designed based on a design of experiment approach. And the mathematical model of the reactive ion etching (RIE) process, with the quality of slider (wall angle), is studied using the Design of Experiment (DOE) approach. Finally, the mathematical model of etched wall angle was constructed and evaluated.