Title :
First observation of stimulated emission from current injected InGaN/AlGaN double-heterostructure diode
Author :
Egawa, Takashi ; Murata, Yoshihiko ; Jimbo, Takashi ; Umeno, Masayoshi
Author_Institution :
Res. Center for Micro-Structure Devices, Nagoya Inst. of Technol., Japan
Abstract :
We report the first observation of stimulated emission from the InGaN/AlGaN double-heterostructure diode under higher injected current at 300 K. This technique is very promising for room-temperature CW operation of blue laser diodes
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; semiconductor lasers; stimulated emission; surface emitting lasers; 300 K; 380 nm; 400 to 1000 mA; 440 nm; InGaN-AlGaN; InGaN/AlGaN double-heterostructure diode; blue laser diodes; injected current; room-temperature CW operation; stimulated emission; surface emitting spectra; Aluminum gallium nitride; Artificial intelligence; Current measurement; Diode lasers; Gallium nitride; Impurities; Pulse measurements; Spontaneous emission; Stimulated emission; Temperature;
Conference_Titel :
Electron Devices Meeting, 1995. IEDM '95., International
Conference_Location :
Washington, DC
Print_ISBN :
0-7803-2700-4
DOI :
10.1109/IEDM.1995.499386
