Title :
The fabrication and characterization of large scale integrated field emitter arrays for high current electron sources
Author :
Urayama, Masao ; Tokumaru, Terutaka ; Takegawa, Yoshiyuki ; Morita, Yuko ; Maruo, Yuji ; Ide, Tetsuya ; Inoue, Yoshio ; Yano, Seiki
Author_Institution :
Functional Devices Labs., Sharp Corp., Chiba, Japan
Abstract :
We report on the fabrication and the characteristics of large scale integrated field emitter arrays (FEAs) containing six million emitters. Our FEAs have a unique structure having a thermal-oxidized SiO 2 film as an insulator layer which separates the gate electrodes from the silicon cathode substrate. An anode current of 63.8 mA at 58.7 V has been obtained in the six million field emitters. This is one of the highest values reported in the world to date. From the FEA characteristics we have estimated a variation of the radius of curvature of the emitter tips. This variation has been found to be within 6.4 nm ±1.05 nm
Keywords :
electron field emission; electron sources; silicon; vacuum microelectronics; 58.7 V; 63.8 mA; Si; Si cathode substrate; SiO2 insulator layer; SiO2-Si; characterization; fabrication; field emitter arrays; high current electron sources; large scale integrated arrays; thermal-oxidized SiO2 film; Anodes; Cathodes; Electrodes; Fabrication; Field emitter arrays; Insulation; Large scale integration; Semiconductor films; Silicon; Substrates;
Conference_Titel :
Electron Devices Meeting, 1995. IEDM '95., International
Conference_Location :
Washington, DC
Print_ISBN :
0-7803-2700-4
DOI :
10.1109/IEDM.1995.499387
