Title :
Charge Transport and Electroluminescence in PECVD Grown Silicon-Nanocrystals-Based LEDs
Author :
Anopchenko, A. ; Prezioso, S. ; Gaburro, Z. ; Ferraioli, L. ; Pucker, G. ; Bellutti, P. ; Pavesi, L.
Author_Institution :
Dept. of Phys., Trento Univ., Trento
Abstract :
Electrical carrier injection into PECVD grown silicon-nanocrystals-based LEDs was examined by I-V, C-V, and impedance measurements. Electroluminescence was measured as a function of gate AC frequency. The correlations between conduction mechanism and electroluminescence are discussed.
Keywords :
electric admittance measurement; electroluminescence; elemental semiconductors; light emitting diodes; nanostructured materials; nanotechnology; plasma CVD; semiconductor device measurement; silicon; LED; PECVD; Si; charge transport; electrical carrier injection; electroluminescence; silicon nanocrystals; Capacitance-voltage characteristics; Dielectric measurements; Electroluminescence; Integrated circuit measurements; Light emitting diodes; Low voltage; Nanocrystals; Silicon; Time measurement; Velocity measurement;
Conference_Titel :
Group IV Photonics, 2007 4th IEEE International Conference on
Conference_Location :
Tokyo
Print_ISBN :
978-1-4244-0934-1
DOI :
10.1109/GROUP4.2007.4347670
