Title :
Visible Luminescence from Controlled Multi-Layer Stack Comprising of Thin Amorphous Silicon and Silicon Nitride Layers
Author :
Tan, W.K. ; Yu, M.B. ; Chen, Q. ; Ye, J.D. ; Lo, G.Q. ; Kwong, D.L.
Author_Institution :
Inst. of Microelectron., Singapore
Abstract :
We report photoluminescence (PL) and electroluminescence (EL) from multi-layer alpha-silicon/Si3N4. Peak PL is tunable within the red region by varying alpha-Si thickness. EL result is also reported. This structure benefits from a low-thermal-budget process (les700degC).
Keywords :
amorphous semiconductors; electroluminescence; optical multilayers; photoluminescence; silicon; silicon compounds; Si-Si3N4; electroluminescence; low-thermal-budget process; multilayer stack; photoluminescence; silicon nitride layers; thin amorphous layers; visible luminescence; Amorphous materials; Amorphous silicon; Annealing; Electrons; Luminescence; Microelectronics; Optical materials; Potential well; Silicon compounds; Temperature;
Conference_Titel :
Group IV Photonics, 2007 4th IEEE International Conference on
Conference_Location :
Tokyo
Print_ISBN :
978-1-4244-0934-1
DOI :
10.1109/GROUP4.2007.4347676
