• DocumentCode
    1659237
  • Title

    Visible Luminescence from Controlled Multi-Layer Stack Comprising of Thin Amorphous Silicon and Silicon Nitride Layers

  • Author

    Tan, W.K. ; Yu, M.B. ; Chen, Q. ; Ye, J.D. ; Lo, G.Q. ; Kwong, D.L.

  • Author_Institution
    Inst. of Microelectron., Singapore
  • fYear
    2007
  • Firstpage
    1
  • Lastpage
    3
  • Abstract
    We report photoluminescence (PL) and electroluminescence (EL) from multi-layer alpha-silicon/Si3N4. Peak PL is tunable within the red region by varying alpha-Si thickness. EL result is also reported. This structure benefits from a low-thermal-budget process (les700degC).
  • Keywords
    amorphous semiconductors; electroluminescence; optical multilayers; photoluminescence; silicon; silicon compounds; Si-Si3N4; electroluminescence; low-thermal-budget process; multilayer stack; photoluminescence; silicon nitride layers; thin amorphous layers; visible luminescence; Amorphous materials; Amorphous silicon; Annealing; Electrons; Luminescence; Microelectronics; Optical materials; Potential well; Silicon compounds; Temperature;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Group IV Photonics, 2007 4th IEEE International Conference on
  • Conference_Location
    Tokyo
  • Print_ISBN
    978-1-4244-0934-1
  • Type

    conf

  • DOI
    10.1109/GROUP4.2007.4347676
  • Filename
    4347676
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1659237