Electromagnetic feedthrough in Si/ZnO-SAW-devices

Author

Möller, Frank ; Buff, Werner

Author_Institution

Fac. of Electr. Eng. & Inf. Technol., Illmenau Univ. of Tech., Germany

fYear

1992

Firstpage

245

Abstract

Electromagnetic feedthrough is a problem in Si/ZnO-surface acoustic wave (SAW)-devices. Parasitic elements providing the electromagnetic feedthrough and methods for calculating these elements are discussed and compared with measurements. The application of these results to the MZOS-FET-convolver and phase-shift keyed (PSK)-filter enables the calculation of the electromagnetic feedthrough in these structures. The influence of packaging the devices, of bonding wires and contact resistances is found to be very important. The output caused by parasitic networks of a number of devices is calculated and the results are presented. Possibilities for minimizing the electromagnetic feedthrough are discussed. Technological steps providing a higher feedthrough attenuation are shown. The application of silicon-on-insulator (SOI)-structures to prepare SAW-devices with minimal electromagnetic feedthrough is discussed

Keywords

contact resistance; elemental semiconductors; packaging; phase shift keying; semiconductor-insulator boundaries; silicon; surface acoustic wave devices; zinc compounds; EM feedthrough; MZOS-FET-convolver; SAW-devices; SOI structures; Si-ZnO; bonding wires; contact resistances; feedthrough attenuation; packaging; parasitic elements; phase-shift keyed; Acoustic measurements; Acoustic waves; Attenuation; Bonding; Electrical resistance measurement; Electromagnetic measurements; Electromagnetic scattering; Packaging; Silicon on insulator technology; Wires;

fLanguage

English

Publisher

ieee

Conference_Titel

Ultrasonics Symposium, 1992. Proceedings., IEEE 1992

Conference_Location

Tucson, AZ

Print_ISBN

0-7803-0562-0

Type

conf

DOI

10.1109/ULTSYM.1992.276027

Filename

276027