Title :
Growth rate limiting by Er(TMOD)3 suply in MOMBE growth of ErSiO crystalline
Author :
Choi, Hong Soon ; Tateishi, Kenju ; Nakayama, Y. ; Isshiki, H. ; Kimura, T.
Author_Institution :
Dept. of Electron. Eng., Univ. of Electro-Commun., Chofu
Abstract :
This paper presents the relation between the partial pressures and growth rate on forming Er-Si-O crystalline thin films used by MOMBE.
Keywords :
crystallites; erbium; molecular beam epitaxial growth; optical films; photoluminescence; silicon compounds; MOMBE growth; SiO:Er; erbium-doped silicon crystalline thin films; growth rate limitation; metal organic molecular beam epitaxy; partial pressures; Atomic measurements; Crystallization; Erbium; Heating; Molecular beam epitaxial growth; Silicon; Tellurium; Temperature; Thermal quenching; Transistors;
Conference_Titel :
Group IV Photonics, 2007 4th IEEE International Conference on
Conference_Location :
Tokyo
Print_ISBN :
978-1-4244-0934-1
DOI :
10.1109/GROUP4.2007.4347678
