Title :
Optical characteristics of erbium-doped silicon suboxide emitting at 1.5μm
Author :
Naka, Y. ; Kishi, M. ; Yamamoto, N. ; Miyawaki, D. ; Yoshida, T. ; Minami, T. ; Ito, K. ; Tsuchiya, M. ; Nakamura, Y.
Author_Institution :
Grad. Sch. of Sci. & Technol., Kumamoto Univ., Kumamoto
Abstract :
We have formed erbium-doped silicon suboxide by vacuum deposition of erbium and silicon monoxide and subsequent annealing. The samples exhibited strong photoluminescence intensity at 1.5 μm at room temperature.
Keywords :
annealing; erbium; optical materials; photoluminescence; silicon compounds; vacuum deposition; SiO:Er; annealing; erbium-doped silicon suboxide; photoluminescence; temperature 293 K to 298 K; vacuum deposition; wavelength 1.5 μm; Absorption; Annealing; Erbium; Optical pumping; Optical saturation; Photoluminescence; Photonic band gap; Silicon; Stimulated emission; Temperature dependence;
Conference_Titel :
Group IV Photonics, 2007 4th IEEE International Conference on
Conference_Location :
Tokyo
Print_ISBN :
978-1-4244-0934-1
DOI :
10.1109/GROUP4.2007.4347679
