Title :
Effects of technological and geometrical parameters of a tri-gate MOSFET fabricated in a bulk technology
Author :
Ramadout, B. ; Lu, G.-N. ; Carrère, J.P. ; Pinzelli, L. ; Perrot, C. ; Rivoire, M. ; Nemouchi, F.
Author_Institution :
STMicroelectronics, Crolles, France
Abstract :
We have investigated, by TCAD simulations, a tri-gate MOSFET fabricated in a bulk CMOS technology. By biasing both lateral-gates with the same voltage, this device is operated as a surface-gate transistor and a lateral one in parallel connection. We observe two different thresholds and a non-standard behavior of the lateral MOS due to source-drain doping profiles. This proposed device with multi-gate controllability may find many analog and digital applications. With the use of a mobility model, simulated results are compared with measured characteristics of the device. Effects of technological and geometrical parameters are identified and evaluated to allow performance optimization.
Keywords :
CAD; CMOS logic circuits; MOSFET; doping profiles; TCAD simulations; bulk CMOS technology; geometrical parameters; lateral-gates; mobility model; multigate controllability; source-drain doping profiles; surface-gate transistor; technological parameters; trigate MOSFET; CMOS image sensors; CMOS technology; Controllability; Doping; Etching; Isolation technology; MOSFET circuits; Semiconductor process modeling; Surface fitting; Voltage;
Conference_Titel :
Nanoelectronics Conference (INEC), 2010 3rd International
Conference_Location :
Hong Kong
Print_ISBN :
978-1-4244-3543-2
Electronic_ISBN :
978-1-4244-3544-9
DOI :
10.1109/INEC.2010.5424610
