Title :
Enhanced Hole Mobility in p-type ??-FeSi2 Films Grown by Molecular Beam Epitaxy Using High-Purity Fe Source
Author :
Suzuno, M. ; Ugajin, Y. ; Murase, S. ; Suemasu, T.
Author_Institution :
Inst. of Appl. Phys., Tsukuba Univ., Tsukuba
Abstract :
The hole mobilities increased and hole densities decreased by one order of magnitude in intentionally undoped p-type beta-FeSi2 films formed with high-purity 5N-Fe source. The measured mobilities were reproduced well by considering several scattering mechanisms.
Keywords :
hole mobility; iron compounds; molecular beam epitaxial growth; thin films; FeSi2; carrier scattering mechanisms; enhanced hole mobility; high-purity 5N-Fe source; hole densities; molecular beam epitaxy; undoped p-type films; Annealing; Charge carrier density; Conductivity; Impurities; Indium tin oxide; Iron; Molecular beam epitaxial growth; Optical films; Optical scattering; Temperature;
Conference_Titel :
Group IV Photonics, 2007 4th IEEE International Conference on
Conference_Location :
Tokyo
Print_ISBN :
978-1-4244-0934-1
DOI :
10.1109/GROUP4.2007.4347680
