The role of excess Si content on the number of Si-nanoclusters/Er ions couplings of Er doped SiOx thin films

Erbium ions have been used as active ions in optical amplifiers because 1.54 mum luminescence due to ⁴I_13/2 rarr⁴I_15/2 4f transition is sharp and intrinsic almost independently of temperature and host matrix, and also corresponds with standard optical telecommunication window. In order to overcome the small absorption cross-section of Er ions, the Er sensitizer such as Yb³⁺ ions has been introduced. The paper discusses the role of excess Si content on the number of silicon nanocluster-Er ion coupling of Erbium doped silicon oxide thin films.