DocumentCode
1659653
Title
Silicon Photonic Crystal Modulation Device: Based On Horizontally Activated MOS capacitor
Author
Chen, Xiaonan ; Chen, Jiaqi ; Gu, Lanlan ; Jiang, Wei ; Chen, Ray T.
Author_Institution
Dept. of Electr. & Comput. Eng., Univ. of Texas at Austin, Austin, TX
fYear
2007
Firstpage
1
Lastpage
3
Abstract
A MOS-capacitor-based silicon photonic crystal modulation device is proposed to achieve active transmission control with ultra-low gate capacitance and simplified fabrication processes. Optical and electrical simulation results confirm the enhanced modulation efficiency.
Keywords
MOS capacitors; capacitance; elemental semiconductors; integrated optics; integrated optoelectronics; optical fabrication; optical modulation; photonic crystals; silicon; MOS-capacitor-based silicon photonic crystal modulation device; Si; active transmission control; modulation efficiency; simplified fabrication processes; ultralow gate capacitance; High speed optical techniques; MOS capacitors; Microelectronics; Optical modulation; Optical refraction; Optical sensors; Optical waveguides; P-i-n diodes; Photonic crystals; Silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
Group IV Photonics, 2007 4th IEEE International Conference on
Conference_Location
Tokyo
Print_ISBN
978-1-4244-0934-1
Type
conf
DOI
10.1109/GROUP4.2007.4347688
Filename
4347688
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