Title :
Study on electron mobility in nanoscale DG MOSFETs with symmetric, asymmetric and independent operation modes
Author :
Xu, Yiwen ; Chen, Lin ; Zhang, Lining ; Zhou, Wang ; He, Frank
Abstract :
Electron mobility in nanoscale double-gate (DG) MOSFETs with symmetric, asymmetric and independent operation modes is studied in this paper by using a comprehensive numerical model. A numerical program is first developed and then the dependence of electron mobility on device geometry and bias conditions are simulated. It is shown that that electron mobility changes monotonically with effective field in symmetric conditions while a peek in the curve of phonon-limited mobility versus the gate biases shows a new feature due to the impact of effective field on intra-valley and inter-valley scattering for independent gate operation mode.
Keywords :
MOSFET; electron mobility; nanotechnology; numerical analysis; semiconductor device models; asymmetric mode; comprehensive numerical model; device geometry; effective field impact; electron mobility; gate bias; independent operation mode; intervalley scattering; intravalley scattering; nanoscale double-gate MOSFETs; numerical program; phonon-limited mobility; symmetric mode; Electron mobility; Geometry; MOSFETs; Nanoscale devices; Particle scattering; Phonons; Rough surfaces; Silicon on insulator technology; Solid modeling; Surface roughness;
Conference_Titel :
Nanoelectronics Conference (INEC), 2010 3rd International
Conference_Location :
Hong Kong
Print_ISBN :
978-1-4244-3543-2
Electronic_ISBN :
978-1-4244-3544-9
DOI :
10.1109/INEC.2010.5424622
