• DocumentCode
    1659715
  • Title

    High-performance silicon phase modulator based on a double MOS capacitor configuration

  • Author

    Mao, An ; Gao, Dingshan ; Zhou, Zhiping

  • fYear
    2007
  • Firstpage
    1
  • Lastpage
    3
  • Abstract
    A silicon double metal-oxide-semiconductor (MOS) capacitor structure is proposed to form a high efficient, high speed, and compact electrooptic phase modulator. The simulation results show that the modulation efficiency, Vpi Lpi , reaches 0.16 (V.cm) and the modulation speed exceeds 15 GHz.
  • Keywords
    MOS capacitors; electro-optical modulation; elemental semiconductors; integrated optoelectronics; phase modulation; silicon; Si; electrooptic phase modulator; modulation efficiency; modulation speed; silicon double metal-oxide-semiconductor capacitor structure; High speed optical techniques; Hydrogen; MOS capacitors; Nonlinear optics; Optical modulation; Optical propagation; Optical refraction; Optical variables control; Phase modulation; Silicon;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Group IV Photonics, 2007 4th IEEE International Conference on
  • Conference_Location
    Tokyo
  • Print_ISBN
    978-1-4244-0934-1
  • Type

    conf

  • DOI
    10.1109/GROUP4.2007.4347691
  • Filename
    4347691
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1659715