DocumentCode
1659738
Title
Dispersion and anisotropy of Si´s third-order nonlinearity from 1.2 to 2.4 μm
Author
Zhang, Jidong ; Lin, Qiang ; Agrawal, Govind P. ; Fauchet, Philippe M.
Author_Institution
Dept. of Electr. & Comput. Eng., Univ. of Rochester, Rochester, NY
fYear
2007
Firstpage
1
Lastpage
3
Abstract
We present the first detailed characterization, to the best of our knowledge, of wavelength and polarization dependence of two-photon absorption and the Kerr nonlinearity in silicon over a spectral range extending from 1.2 to 2.4 mum.
Keywords
elemental semiconductors; infrared spectra; integrated optics; light polarisation; optical Kerr effect; optical dispersion; silicon; two-photon spectra; Kerr nonlinearity; Si; Si anisotropy; Si dispersion; polarization dependence; third-order nonlinearity; two-photon absorption; wavelength 1.2 mum to 2.4 mum; wavelength dependence; Anisotropic magnetoresistance; Geometrical optics; Nonlinear optics; Optical attenuators; Optical polarization; Optical pulse shaping; Optical scattering; Optical waveguides; Pulse measurements; Silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
Group IV Photonics, 2007 4th IEEE International Conference on
Conference_Location
Tokyo
Print_ISBN
978-1-4244-0934-1
Type
conf
DOI
10.1109/GROUP4.2007.4347692
Filename
4347692
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