Title :
Effect of oxygen partial pressure on the electrical properties of the LSCO/AZO heterojunction
Author :
Lee, Shin ; Hu, Yi
Author_Institution :
Dept. of Mater. Eng., Tatung Univ., Taipei, Taiwan
Abstract :
P-type La0.5Sr0.5CoO3 (LSCO) and n-type 0.3 wt% Al-doped ZnO (AZO) thin films were obtained by radio-frequency magnetron sputter under different controlled Ar/O2 atmosphere. The structure of the heterojunction was p-LSCO (~125 and 250 nm)/n-AZO (~300 and 600 nm)/Si wafer and show good rectifying behavior.
Keywords :
II-VI semiconductors; aluminium; elemental semiconductors; lanthanum compounds; p-n heterojunctions; rectification; semiconductor thin films; semiconductor-insulator boundaries; silicon; sputter deposition; sputtered coatings; strontium compounds; wide band gap semiconductors; zinc compounds; LSCO-AZO heterojunction; La0.5Sr0.5CoO3-ZnO:Al-Si; electrical properties; oxygen partial pressure; p-n heterojunction; radiofrequency magnetron sputter; rectifying behavior; size 250 nm; size 600 nm; thin films; wafer; Annealing; Argon; Atmosphere; Conductivity; Diodes; Heterojunctions; Magnetic materials; Silicon; Sputtering; Zinc oxide;
Conference_Titel :
Nanoelectronics Conference (INEC), 2010 3rd International
Conference_Location :
Hong Kong
Print_ISBN :
978-1-4244-3543-2
Electronic_ISBN :
978-1-4244-3544-9
DOI :
10.1109/INEC.2010.5424626
