DocumentCode :
1659793
Title :
The valence charge polarization induced by the shorter and stronger bonds between under-coordinated gold atoms
Author :
Zhang, Xi ; Kuo, Jer-lai ; Gu, Mingxia ; Fan, Xiaofeng ; Bai, Ping ; Qing Gong Song ; Sun, C.Q.
Author_Institution :
Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ., Singapore, Singapore
fYear :
2010
Firstpage :
197
Lastpage :
199
Abstract :
Relativistic density functional theory calculations have been conducted to examine the effect of atomic under-coordination. The calculated results agree exceedingly well with experimental observations: skin-depth bond contraction, chain end stats polarization, potential well depression, core level shift, and the valence charge polarization of gold nanostructures. Consistency between calculations and experimental observations affirms the prediction of the bond-order-length-strength (BOLS) correlation theory [Sun CQ, Phys Rev B 69, 045105 (2004)], asserting that the under-coordinated surface atoms are indeed associated with local strain, quantum trap depression, charge densification and valence charge polarization and that the locally polarized and pinned electrons are responsible for the metal-insulator transition and magnetism present of gold nanoparticles.
Keywords :
core levels; density functional theory; electron spin polarisation; gold; magnetic particles; metal-insulator transition; nanoparticles; relativistic band structure calculations; valence bands; Au; atomic under-coordination; bond-order-length-strength correlation theory; chain end stats polarization; charge densification; core level shift; gold nanoparticles; gold nanostructures; local strain; locally polarized electrons; magnetism; metal-insulator transition; pinned electrons; potential well depression; quantum trap depression; relativistic density functional theory calculations; skin-depth bond contraction; under-coordinated gold atoms; under-coordinated surface atoms; valence charge polarization; Bonding; Density functional theory; Electron traps; Gold; Magnetic field induced strain; Nanostructures; Polarization; Potential well; Quantum mechanics; Sun;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Nanoelectronics Conference (INEC), 2010 3rd International
Conference_Location :
Hong Kong
Print_ISBN :
978-1-4244-3543-2
Electronic_ISBN :
978-1-4244-3544-9
Type :
conf
DOI :
10.1109/INEC.2010.5424627
Filename :
5424627
Link To Document :
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