DocumentCode
1659793
Title
The valence charge polarization induced by the shorter and stronger bonds between under-coordinated gold atoms
Author
Zhang, Xi ; Kuo, Jer-lai ; Gu, Mingxia ; Fan, Xiaofeng ; Bai, Ping ; Qing Gong Song ; Sun, C.Q.
Author_Institution
Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ., Singapore, Singapore
fYear
2010
Firstpage
197
Lastpage
199
Abstract
Relativistic density functional theory calculations have been conducted to examine the effect of atomic under-coordination. The calculated results agree exceedingly well with experimental observations: skin-depth bond contraction, chain end stats polarization, potential well depression, core level shift, and the valence charge polarization of gold nanostructures. Consistency between calculations and experimental observations affirms the prediction of the bond-order-length-strength (BOLS) correlation theory [Sun CQ, Phys Rev B 69, 045105 (2004)], asserting that the under-coordinated surface atoms are indeed associated with local strain, quantum trap depression, charge densification and valence charge polarization and that the locally polarized and pinned electrons are responsible for the metal-insulator transition and magnetism present of gold nanoparticles.
Keywords
core levels; density functional theory; electron spin polarisation; gold; magnetic particles; metal-insulator transition; nanoparticles; relativistic band structure calculations; valence bands; Au; atomic under-coordination; bond-order-length-strength correlation theory; chain end stats polarization; charge densification; core level shift; gold nanoparticles; gold nanostructures; local strain; locally polarized electrons; magnetism; metal-insulator transition; pinned electrons; potential well depression; quantum trap depression; relativistic density functional theory calculations; skin-depth bond contraction; under-coordinated gold atoms; under-coordinated surface atoms; valence charge polarization; Bonding; Density functional theory; Electron traps; Gold; Magnetic field induced strain; Nanostructures; Polarization; Potential well; Quantum mechanics; Sun;
fLanguage
English
Publisher
ieee
Conference_Titel
Nanoelectronics Conference (INEC), 2010 3rd International
Conference_Location
Hong Kong
Print_ISBN
978-1-4244-3543-2
Electronic_ISBN
978-1-4244-3544-9
Type
conf
DOI
10.1109/INEC.2010.5424627
Filename
5424627
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