DocumentCode :
1659812
Title :
Fabrication of InP micro-lasers on 200 mm wafers
Author :
Mandorlo, F. ; Romeo, P. Rojo ; Fedeli, J.M. ; Letartre, X. ; Grosse, P. ; Regreny, P.
Author_Institution :
Ecole centrale de Lyon, CNRS, Ecully
fYear :
2007
Firstpage :
1
Lastpage :
3
Abstract :
By die to wafer bonding of InP heterostructure on 200 mm wafer, microelectronics type fabrication of mu source has been achieved using DUV lithography. LED emission was only obtained due to slanted etching of the cavity.
Keywords :
III-V semiconductors; etching; indium compounds; integrated optics; light sources; microcavity lasers; optical fabrication; semiconductor lasers; ultraviolet lithography; wafer bonding; DUV lithography; InP; LED emission; die bonding; laser cavity; micro-laser fabrication; microelectronics type fabrication; semiconductor heterostructure; size 200 mm; slanted etching; wafer bonding; Biomembranes; Contacts; Electromagnetic waveguides; Fabrication; Indium phosphide; Laser modes; Optical pumping; Optical resonators; Optical waveguides; Waveguide lasers;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Group IV Photonics, 2007 4th IEEE International Conference on
Conference_Location :
Tokyo
Print_ISBN :
978-1-4244-0934-1
Type :
conf
DOI :
10.1109/GROUP4.2007.4347695
Filename :
4347695
Link To Document :
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