DocumentCode
1659812
Title
Fabrication of InP micro-lasers on 200 mm wafers
Author
Mandorlo, F. ; Romeo, P. Rojo ; Fedeli, J.M. ; Letartre, X. ; Grosse, P. ; Regreny, P.
Author_Institution
Ecole centrale de Lyon, CNRS, Ecully
fYear
2007
Firstpage
1
Lastpage
3
Abstract
By die to wafer bonding of InP heterostructure on 200 mm wafer, microelectronics type fabrication of mu source has been achieved using DUV lithography. LED emission was only obtained due to slanted etching of the cavity.
Keywords
III-V semiconductors; etching; indium compounds; integrated optics; light sources; microcavity lasers; optical fabrication; semiconductor lasers; ultraviolet lithography; wafer bonding; DUV lithography; InP; LED emission; die bonding; laser cavity; micro-laser fabrication; microelectronics type fabrication; semiconductor heterostructure; size 200 mm; slanted etching; wafer bonding; Biomembranes; Contacts; Electromagnetic waveguides; Fabrication; Indium phosphide; Laser modes; Optical pumping; Optical resonators; Optical waveguides; Waveguide lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
Group IV Photonics, 2007 4th IEEE International Conference on
Conference_Location
Tokyo
Print_ISBN
978-1-4244-0934-1
Type
conf
DOI
10.1109/GROUP4.2007.4347695
Filename
4347695
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